Epitaxial graphene film on SiC

 
  • Polytype 4H
  • 11x11 mm

Specification

Parameter Name Value
Material Epitaxial graphene on SiC
Growth method Thermal decomposition of SiC surface
Substrate polytype 4H
Face Si
Sample size 11x11 mm
Surface coverage 100%
Graphene monolayer coverage 50-70%
Terrace width 200-500nm
Step height 1-2 nm
Conductivity type n
Resistivity 1-2 kOhm
Application Sensors and another devices