Monolayer Graphene On SiC
Monolayer graphene on SiC consists of a 5x5mm and 11x11mm epitaxial graphene films on conductive and semi-insulating 4-H SiC wafers.
The graphene films were developed via thermal decomposition of
SiC surface in argon ambient. SiC wafers were heated via induction to high temperatures
(>1400°C). The use of argon in the growth process improved the graphene film's structure
and the homogeneity of the graphene layer.
Monolayer Graphene on SiC Specifications
Nitride Crystals, Inc. currently offers 5x5mm and 11x1mm monolayer graphene on SiC substrates.
Specifications
| Parameter Name | Value |
| Material | Epitaxial graphene on SiC |
| Growth method | Thermal decomposition of SiC surface |
| Substrate polytype | 4H |
| Substrate thickness | 500µm |
| Face | Si(0001) |
| Sample size | 5x5 mm, 11x11 mm |
| Surface coverage | 100% covered by graphene. Sample properties are dominated by monolayer graphene. |
| Root mean square (RMS) of surface roughness | 0.5 – 1 nm |
| Monolayer graphene parameters | |
| Thickness variation | 80-90% of monolayer areas |
| Conductivity type | n type |
| Sheet carrier density | 0.5 x 1012 - 1x1012cm -2 |
| Mobility | 4000-5000cm2/Vs |