C-Plane Aluminum Nitride (AlN) Substrates
- High electric resistivity - 10-11-0-13 0hm +/-deg cm
- High thermal conductivity - 3.2 Watt/(cmK)
- Close lattice and thermal match with GaN (reduced epilayer cracking)
- Mechanically and chemically stable
- Low dislocation density – (in best 103 cm-2)
- Optically transparent piezoelectric with high surface acoustic waves speed – 6 km/sec
Specification
| Thickness, mM |
0.4 ± 0.03 |
0.4 ± 0.03 |
| FWHM, arcsec |
<300 |
<300 |
| Surface orientation (0001), +/-deg |
<0.5 |
<0.5 |
| Al-face |
epi-ready |
epi-ready |
| Primary Flat Length, mM |
8 ± 2 |
16 ± 2 |
| Primary Flat orientation, +/-deg |
<11-20> ± 5 |
<11-20> ± 5 |
| Secondary Flat Length, mM |
4 ± 2 |
8 ± 2 |
