Featured Product

3” Production Grade 4H-SiC wafers 4 degree off-axis

Micropipe density less than 1cM2. 90% of area is micropipe free. Double side polished (DSP) Si-face CMP epi-ready. 12 wafers available for immediate delivery from inventory. Request a quote for Production 3” on-axis Silicon Carbide wafers.

  • Single crystal
  • C-Plane 15mm and 2"
  • M-Plane 15mm
  • High UV transparency
  • High resistivity
SiC Wafer
  • Single crystal
  • Low micropipe
  • 6H 2" and 3"
  • 4H 2" and 3"
Lely Crystals
  • 6H, 8H
  • 15R, 21R, 27R
  • Other polytypes, please inquire

Substrates for Nitride Devices

Nitride Crystals, Inc. manufactures substrates for a broad range of III-nitride devices. These include single-crystal AlN substrates and conducting low-micropipe density and micropipe-free SiC substrates. Nitride Crystals, Inc. is also offering SiC Lely crystals in a variety of difficult-to-find polytypes for the researcher interested in exploring the behavior of various SiC polytypes.

The single-crystal AlN substrates are available in 15mM and 2” diameter for C-Plane polar orientation and 15mM diameter M-Plane non-polar orientation. On special order, other orientations of single crystal AlN substrates can also be produced. Aluminum Nitride wafers can be regarded as the universal native substrate for the growth of III-nitrides.

Both conducting, low-micropipe and micropipe-free 4H- and 6H-SiC wafers are being manufactured in 2” and 3” diameters. 4” diameter 4H-SiC is under development. Currently Nitride Crystals, Inc. has no plans to develop semi-insulating SiC.

Nitride Crystals, Inc. has available a stock of high-quality Lely crystals of various polytypes. The supply of the more rare polytypes is limited; however, they offer an opportunity for scientists to explore the properties of SiC polytypes that are not commonly available.