Patents
- US Patent No. 6.261.363.Technique for growing silicon carbide monocrystals
- US Patent No. 6.428.621.Method for growing low defect density silicon carbide
- US Patent No. 6.508.880.Apparatus for growing low defect density silicon carbide
- US Patent No. 6.534.026.Low defect density silicon carbide
- US Patent No. 6.537.371.Niobium crucible fabrication and treatment
- US Patent No. 6.547.877.Tantalum crucible fabrication and treatment
- US Patent No. 6.562.130.Low defect axially grown single crystal silicon carbide
- US Patent No. 6.562.131.Method for growing single crystal silicon carbide
- US Patent No. 6.863.728.Apparatus for growing low defect density silicon carbide
- US Patent No. 7.056.383.Tantalum based crucible