Publications

  • M. A. Reshchikov, D. O. Demchenko, A. Usikov, H. Helava, and Yu. Makarov Carbon defects as sources of the green and yellow luminescence bands in undoped GaN. Phys. Rev. B 90, 235203 – Published 12 December 2014.
  • H. Helava, T. Chemekova, O. Avdeev, E. Mokhov, S. Nagalyuk,Yu. Makarov, and M. Ramm. AlN substrates and epitaxy results. Phys. Stat. Sol. (c) 7–8:2115–2117 (2010) , doi: 10.1002/pssc.200983619.
  • Yu.N. Makarov, D.P.Litvin, A.V. Vasiliev, A.S. Sega, S.S. Nagalyuk, H. Helava,M.I. Voronova, and K.D. Scherbachov. 3" 6H SiC wafers production for III-N epitaxy. Proceedings of Proceedings of 7th Conference “Nitrides of gallium, indium and aluminum”. Moscow, 2010, p. 23-24.
  • A.Y. Polyakov, N.B. Smirnov , A.V. Govorkov , T.G. Yugova , K.D. Scherbatchev , O.A. Avdeev, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, H. Helava, and Yu. N. Makarov Deep Centers in Bulk AlN and Their Relation to Low-Angle Dislocation Boundaries. Journal of Physica B, 404 (2009), p.p.4939-4941.
  • S.V.Biryukov, H. Schmidt A. V. Sotnikov, M. Weihnacht, T. Yu. Chemekova , and Yu.N.Makarov. Ring waveguide resonator on surface acoustic waves. Journal of Applied Physics, 2009.
  • T.Yu. Chemekova O.V. Avdeev, S.Yu. Kurin , E.N. Mokhov, S.S. Nagalyuk, Yu.N. Makarov, M.G.Ramm, and H. Helava AlN Substrates and Epitaxy results. Trans Tech Periodicals published by Trans Tech Publications Ltd, Laubisrutistr.24,CH-8712 tafa-Zurich, Switzerland, 2009.
  • V . Sotnikov , H . Schmidt , E . P . Smirnova , M . Weihnacht , T . Yu . Chemekova , and Yu. N. Makarov. Material parameters of AlN and LiAlO 2 single crystals. Proceedings of European Frequency and Time Forum & International Frequency control Symposium ( EFTF - IEEE IFCS), France, 2009, pp 935-938.
  • H. Helava, T.Yu. Chemekova, O.V. Avdeev, E.N. Mokhov, S.S. Nagalyuk, Yu.N. Makarov, and M.G. Ramm. AlN Substrates and Epitaxy results, Journal of Physica Status Solidi,2009. Journal of Applied Physics, 2009.
  • T.Yu. Chemekova, O.V. Avdeev, E.N. Mokhov, S.S. Nagalyuk, Yu.N. Makarov, M.G.Ramm, H. Helava. AlN Substrates and Epitaxy results. Proceedings of 13th International Conference on Silicon Carbide and Related Materials 2009 Nürnberg, Germany, October 11 - 16, 2009.
  • H. Helava, T.Yu. Chemekova, O.V. Avdeev, E.N. Mokhov, S.S. Nagalyuk, Yu.N. Makarov, and M.G. Ramm. AlN Substrates and Epitaxy results. Proceedings of ICNS-8., Korea, 2009.
  • A. V. Sotnikov, H. Schmidt, E. P. Smirnova, M. Weihnacht, T. Yu . Chemekova, and Yu. N . Makarov. Material parameters of AlN and LiAlO 2 single crystals. Proceedings of European Frequency and Time Forum & International Frequency control Symposium ( EFTF - IEEE IFCS), Besancon, France, 2009, p.246 B.
  • A. V. Sotnikov, H. Schmidt, E. P. Smirnova, M. Weihnacht, T. Yu. Chemekova, and Yu. N. Makarov. Material parameters of AlN and LiAlO 2 single crystals. European Frequency and Time Forum & International Frequency control Symposium ( EFTF - IEEE IFCS 2009), Besancon, France, 20-24 April, 2009. Program and Abstracts , p. 246. В.
  • A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, T.G. Yugova, K.D. Scherbatchev, O.A. Avdeev, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, H. Helava, and Yu. N. Makarov. Deep Centers in Bulk AlN and Their Relation to Low-Angle Dislocation Boundaries. Proceedings of 25th International Conference on “Defects in Semiconductors”, Saint-Petersburg, 2009.
  • T. Chemekova, O. Avdeev, E. Mokhov, A. Roenkov, and Yu. Makarov. Groth of long bulk AlN crystals. Proceedings of 6th International Seminar on “Silicon Carbide and relations materials”. 2009, Novgorod, pp34-38.
  • Yu.N. Makarov, D.P.Litvin, A.V. Vasiliev, A.S. Sega, S.S. Nagalyuk, H. Helava,M.I. Voronova, and K.D. Scherbachov. , Status of 3" 6H SiC bulk crystal growth. Proceedings of ICSCRM, Germany, (2009), 4 pp.
  • Tuomisto, J.-M. Mäki, T.Yu. Chemekova, Yu.N. Makarov, O.V. Avdeev, E.N. Mokhov, A.S. Segal, M.G. Ramm, S. Davis, G. Huminic, H. Helava, M. Bickermann, and B.M. Epelbaum. Characterization of bulk AlN crystals with positron annihilation spectroscopy. Journal of Crystal Growth, 310, (2008)3998-4001.
  • Yu.N. Makarov, O.V. Avdeev, I.S. Barash, , T.Yu. Chemekova, E.N. Mokhov, S., A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, M.G. Ramm, S. Davis, G. Huminic, H. Helava, and J. Cryst. Growth Experimental and theoretical analysis of sublimation growth of AlN bulk crystals. Journal of Crystal Growth 310 (2008) 881-886.
  • T.Yu. Chemekova, O.V. Avdeev, I.S. Barash, E.N. Mokhov, S.S. Nagalyuk, A.D. Roenkov, A.S. Segal, Yu.N. Makarov, M.G. Ramm, S.Davis, G.Huminic, and H. Helava. Sublimation growth of 2 inch diameter bulk AlN crystals. Physica Status Solidi (C) 5 (2008) 1612-1614.
  • T.Yu. Chemekova, A.V.Sotnikov,R.Kunze , H. Schmidt, M.Weihnacht, E.N. Mokhov, and Yu.N. Makarov. Investigation of SAW in sublimation aluminum nitride monocrystals. Proceedings of 6th Conference “Nitrides of gallium, indium and aluminum”. 2008, Saint-Petersburg, p 163-164.
  • T.Yu. Chemekova , O.V. Avdeev, S.S. Nagalyuk, A.S. Segal, E.N. Mokhov, and Yu.N. Makarov. Physical vapor transport growth of 2 inch diameter bulk aluminum nitride crystals. Proceedings of 6th Conference “Nitrides of gallium, indium and aluminum”. 2008, Saint-Petersburg, pp 18-19.
  • W.V.Lundin, E.E.Zavarin, M. A.Sinitsyn, А. E.Nikolaev, A.V. Sakharov, A.F.Tsatsulnikov, T.Yu.Chemekova, V.Avdeev, S.S.Nagalyuk, A.E.Nikolaev, A.V.Sakharov, A.F.Tsatsulnikov, T.Yu.Chemekova, E.N.Mokhov, O.V.Avdeev, S.S.Nagalyuk, and Yu.N.Makarov. Ultra-violet Leds Grown on AlN Substrates. Proceedings 6th All-Russian Conference, Gallium, aluminum and indium nitrides, Saint-Petersburg(2008), 100-101.
  • O.V. Avdeev, I.S. Barash, D.S. Bazarevskiy, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, and Yu.N. Makarov. Features of bulk aluminium nitride crystals growth. Proceedings of 5th Conference “Nitrides of gallium, indium and aluminum”. 2007, Saint-Petersburg, p 38.
  • Yu. Gutkin, A.G. Sheinerman, T.S. Argunova, J.M. Yi, J.H. Je, S.S. Nagalyuk, E.N. Mokhov, G. Margaritondo, and Y. Hwu. Role of micropipes in the formation of pores at foreigh polytype boundaries in SiC crystals. Phys. Rev. B, 2007, Vol. 76, No.6, Art. No. 064117.
  • H. Helava, S.J. Davis, M. G. Ramm, O.V. Avdeev, I.S. Barash, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, Yu. N. Makarov. Growth of Bulk Aluminum Nitride Crystals. Phys. Stat. Sol. (c) 4:2281-2284 (2007), doi: 10.1002/pssc.200674897.
  • F. Tuomisto and J.-M. Maki, T. Yu. Chemekova, Yu. N. Makarov, O. V. Avdeev, E. N. Mokhov, A.S. Segal, M. G. Ramm, S. Davis, G. Huminic, H. Helava, M. Bickermann, B. M. Epelbaum, A. Winnacker. Characterization of bulk AlN crystals with positron annihilation spectroscopy. Journal of Crystal Growth, doi: 10.1016/j.jcrysgro.2008.06.013.
  • H. Helava, S.J. Davis, M. G. Ramm, O.V. Avdeev, I.S. Barash, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, Yu. N. Makarov. Growth of Bulk Aluminum Nitride Crystals. Abstract of International Workshop on Nitride Semiconductors (IWN2006), October 22-27 2006, Kyoto, Japan.
  • M.Yu. Gutkin, A.G. Sheinerman, T.S. Argunova, J.M. Yi, M.U. Kim, J.H. Je, S.S. Nagalyuk, E.N. Mokhov, G. Margaritondo, and Y. Hwu. Interaction of dislocated micropipes with polytype inclusions in SiC. J. Appl. Phys., 2006, Vol. 100, No.9, paper 093518.
  • I.A. Zhmakin, A.V. Kulik, S.Yu. Karpov, S.E. Demina, M.S. Ramm, and Yu.N. Makarov. Evolution of Thermoelastic Strain and Dislocation density during Sublimation Growth of Silicon Carbide. Diam. Rel. Mat. 9, 446-451 (2000).
  • S.Yu. Karpov, A.V. Kulik Yu.N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, and Yu.A. Vodakov. Analysis of sublimation growth of bulk SiC crystals in tantalum container. Journ. Cryst. Growth 211, 347-351 (2000).
  • 11. M.V. Bogdanov, A.O. Galyukov, S.Yu. Karpov, A.V. Kulik, S.K. Kochuguev, D.Kh. Ofengeim, A.V. Tsiryulnikov, I.A.Zhmakin, A.E.Komissarov, O.V.Bord, M.S. Ramm, A.I. Zhmakin, and Yu.N. Makarov. Virtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and Optimization. Mat. Sci. Forum 353-356, 57 (2001).
  • S.Yu. Karpov et al. Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere Phys. Stat. Sol. (a) 176, 435 (1999), 68.45.Da; S7.14.
  • O.V. Avdeev, I.S. Barash, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, Yu.N. Makarov, M.G. Ramm, H. Helava. Manufacturing of crystalline AlN Wafers: Growth of Bulk Crystals, Processing, and Characterization. Abstract of 1st International Symposium on Growth of III-nitrides. June 4-7 2006, Linkoeping, Sweden.