Publications
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M. A. Reshchikov, A. Usikov, H. Helava, Yu. Makarov, V. Prozheeva, I. Makkonen, F. Tuomisto, J. H. Leach & K. Udwary
Evaluation of the concentration of
point defects in GaN.
Nature, Scientific Reports – Published 13 July 2017.
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M. A. Reshchikov, D. O. Demchenko, A. Usikov, H. Helava, and Yu. Makarov
Carbon defects as sources of the green and yellow luminescence bands in undoped GaN.
Phys. Rev. B 90, 235203 – Published 12 December 2014.
- H. Helava, T. Chemekova, O. Avdeev, E. Mokhov, S. Nagalyuk,Yu. Makarov, and M. Ramm.
AlN substrates and epitaxy results.
Phys. Stat. Sol. (c) 7–8:2115–2117 (2010) , doi: 10.1002/pssc.200983619.
- Yu.N. Makarov, D.P.Litvin, A.V. Vasiliev, A.S. Sega, S.S. Nagalyuk, H. Helava,M.I. Voronova, and K.D. Scherbachov.
3" 6H SiC wafers production for III-N epitaxy.
Proceedings of Proceedings of 7th Conference “Nitrides of gallium, indium and aluminum”.
Moscow, 2010, p. 23-24.
- A.Y. Polyakov, N.B. Smirnov , A.V. Govorkov , T.G. Yugova , K.D. Scherbatchev , O.A. Avdeev, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, H. Helava, and Yu. N. Makarov
Deep Centers in Bulk AlN and Their Relation to Low-Angle Dislocation Boundaries.
Journal of Physica B, 404 (2009), p.p.4939-4941.
- S.V.Biryukov, H. Schmidt A. V. Sotnikov, M. Weihnacht, T. Yu. Chemekova , and Yu.N.Makarov.
Ring waveguide resonator on surface acoustic waves.
Journal of Applied Physics, 2009.
- T.Yu. Chemekova O.V. Avdeev, S.Yu. Kurin , E.N. Mokhov, S.S. Nagalyuk, Yu.N. Makarov, M.G.Ramm, and H. Helava
AlN Substrates and Epitaxy results.
Trans Tech Periodicals published by Trans Tech Publications Ltd, Laubisrutistr.24,CH-8712 tafa-Zurich,
Switzerland, 2009.
- V . Sotnikov , H . Schmidt , E . P . Smirnova , M . Weihnacht , T . Yu . Chemekova , and Yu. N. Makarov.
Material parameters of AlN and LiAlO 2 single crystals.
Proceedings of European Frequency and Time Forum & International Frequency control Symposium
( EFTF - IEEE IFCS), France, 2009, pp 935-938.
- H. Helava, T.Yu. Chemekova, O.V. Avdeev, E.N. Mokhov, S.S. Nagalyuk, Yu.N. Makarov, and M.G. Ramm.
AlN Substrates and Epitaxy results, Journal of Physica Status Solidi,2009.
Journal of Applied Physics, 2009.
- T.Yu. Chemekova, O.V. Avdeev, E.N. Mokhov, S.S. Nagalyuk, Yu.N. Makarov, M.G.Ramm, H. Helava.
AlN Substrates and Epitaxy results.
Proceedings of 13th International Conference on Silicon Carbide and Related Materials 2009 Nürnberg,
Germany, October 11 - 16, 2009.
- H. Helava, T.Yu. Chemekova, O.V. Avdeev, E.N. Mokhov, S.S. Nagalyuk, Yu.N. Makarov, and M.G. Ramm.
AlN Substrates and Epitaxy results.
Proceedings of ICNS-8., Korea, 2009.
- A. V. Sotnikov, H. Schmidt, E. P. Smirnova, M. Weihnacht, T. Yu . Chemekova, and Yu. N . Makarov.
Material parameters of AlN and LiAlO 2 single crystals.
Proceedings of European Frequency and Time Forum & International Frequency control Symposium ( EFTF - IEEE IFCS), Besancon, France, 2009,
p.246 B.
- A. V. Sotnikov, H. Schmidt, E. P. Smirnova, M. Weihnacht, T. Yu. Chemekova, and Yu. N. Makarov.
Material parameters of AlN and LiAlO 2 single crystals.
European Frequency and Time Forum & International Frequency control Symposium ( EFTF - IEEE IFCS 2009),
Besancon, France, 20-24 April, 2009. Program and Abstracts , p. 246. В.
- A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, T.G. Yugova, K.D. Scherbatchev, O.A. Avdeev,
T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, H. Helava, and Yu. N. Makarov.
Deep Centers in Bulk AlN and Their Relation to Low-Angle Dislocation Boundaries.
Proceedings of 25th International Conference on “Defects in Semiconductors”, Saint-Petersburg, 2009.
- T. Chemekova, O. Avdeev, E. Mokhov, A. Roenkov, and Yu. Makarov.
Groth of long bulk AlN crystals.
Proceedings of 6th International Seminar on “Silicon Carbide and relations materials”. 2009, Novgorod, pp34-38.
- Yu.N. Makarov, D.P.Litvin, A.V. Vasiliev, A.S. Sega, S.S. Nagalyuk, H. Helava,M.I. Voronova, and K.D. Scherbachov.
, Status of 3" 6H SiC bulk crystal growth.
Proceedings of ICSCRM, Germany, (2009), 4 pp.
- Tuomisto, J.-M. Mäki, T.Yu. Chemekova, Yu.N. Makarov, O.V. Avdeev, E.N. Mokhov, A.S. Segal, M.G. Ramm, S. Davis, G. Huminic, H. Helava, M. Bickermann, and B.M. Epelbaum.
Characterization of bulk AlN crystals with positron annihilation spectroscopy.
Journal of Crystal Growth, 310, (2008)3998-4001.
- Yu.N. Makarov, O.V. Avdeev, I.S. Barash, , T.Yu. Chemekova, E.N. Mokhov, S., A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, M.G. Ramm, S. Davis, G. Huminic, H. Helava, and J. Cryst.
Growth Experimental and theoretical analysis of sublimation growth of AlN bulk crystals.
Journal of Crystal Growth 310 (2008) 881-886.
- T.Yu. Chemekova, O.V. Avdeev, I.S. Barash, E.N. Mokhov, S.S. Nagalyuk, A.D. Roenkov, A.S. Segal, Yu.N. Makarov, M.G. Ramm, S.Davis, G.Huminic, and H. Helava.
Sublimation growth of 2 inch diameter bulk AlN crystals.
Physica Status Solidi (C) 5 (2008) 1612-1614.
- T.Yu. Chemekova, A.V.Sotnikov,R.Kunze , H. Schmidt, M.Weihnacht, E.N. Mokhov, and Yu.N. Makarov.
Investigation of SAW in sublimation aluminum nitride monocrystals.
Proceedings of 6th Conference “Nitrides of gallium, indium and aluminum”. 2008, Saint-Petersburg, p 163-164.
- T.Yu. Chemekova , O.V. Avdeev, S.S. Nagalyuk, A.S. Segal, E.N. Mokhov, and Yu.N. Makarov.
Physical vapor transport growth of 2 inch diameter bulk aluminum nitride crystals.
Proceedings of 6th Conference “Nitrides of gallium, indium and aluminum”. 2008, Saint-Petersburg, pp 18-19.
- W.V.Lundin, E.E.Zavarin, M. A.Sinitsyn, А. E.Nikolaev, A.V. Sakharov, A.F.Tsatsulnikov, T.Yu.Chemekova,
V.Avdeev, S.S.Nagalyuk, A.E.Nikolaev, A.V.Sakharov, A.F.Tsatsulnikov, T.Yu.Chemekova, E.N.Mokhov, O.V.Avdeev, S.S.Nagalyuk, and Yu.N.Makarov.
Ultra-violet Leds Grown on AlN Substrates.
Proceedings 6th All-Russian Conference, Gallium, aluminum and indium nitrides, Saint-Petersburg(2008), 100-101.
- O.V. Avdeev, I.S. Barash, D.S. Bazarevskiy, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, and Yu.N. Makarov.
Features of bulk aluminium nitride crystals growth.
Proceedings of 5th Conference “Nitrides of gallium, indium and aluminum”. 2007, Saint-Petersburg, p 38.
- Yu. Gutkin, A.G. Sheinerman, T.S. Argunova, J.M. Yi, J.H. Je, S.S. Nagalyuk, E.N. Mokhov, G. Margaritondo, and Y. Hwu.
Role of micropipes in the formation of pores at foreigh polytype boundaries in SiC crystals.
Phys. Rev. B, 2007, Vol. 76, No.6, Art. No. 064117.
- H. Helava, S.J. Davis, M. G. Ramm, O.V. Avdeev, I.S. Barash, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, Yu. N. Makarov.
Growth of Bulk Aluminum Nitride Crystals.
Phys. Stat. Sol. (c) 4:2281-2284 (2007), doi: 10.1002/pssc.200674897.
- F. Tuomisto and J.-M. Maki, T. Yu. Chemekova, Yu. N. Makarov, O. V. Avdeev, E. N. Mokhov, A.S. Segal, M. G. Ramm, S. Davis, G. Huminic, H. Helava, M. Bickermann, B. M. Epelbaum, A. Winnacker.
Characterization of bulk AlN crystals with positron annihilation spectroscopy.
Journal of Crystal Growth, doi: 10.1016/j.jcrysgro.2008.06.013.
- H. Helava, S.J. Davis, M. G. Ramm, O.V. Avdeev, I.S. Barash, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, Yu. N. Makarov.
Growth of Bulk Aluminum Nitride Crystals.
Abstract of International Workshop on Nitride Semiconductors (IWN2006), October 22-27 2006, Kyoto, Japan.
- M.Yu. Gutkin, A.G. Sheinerman, T.S. Argunova, J.M. Yi, M.U. Kim, J.H. Je, S.S. Nagalyuk, E.N. Mokhov, G. Margaritondo, and Y. Hwu.
Interaction of dislocated micropipes with polytype inclusions in SiC.
J. Appl. Phys., 2006, Vol. 100, No.9, paper 093518.
- I.A. Zhmakin, A.V. Kulik, S.Yu. Karpov, S.E. Demina, M.S. Ramm, and Yu.N. Makarov.
Evolution of Thermoelastic Strain and Dislocation density during Sublimation Growth of Silicon Carbide.
Diam. Rel. Mat. 9, 446-451 (2000).
- S.Yu. Karpov, A.V. Kulik Yu.N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, and Yu.A. Vodakov.
Analysis of sublimation growth of bulk SiC crystals in tantalum container.
Journ. Cryst. Growth 211, 347-351 (2000).
- 11. M.V. Bogdanov, A.O. Galyukov, S.Yu. Karpov, A.V. Kulik, S.K. Kochuguev, D.Kh. Ofengeim, A.V. Tsiryulnikov, I.A.Zhmakin, A.E.Komissarov, O.V.Bord, M.S. Ramm, A.I. Zhmakin, and Yu.N. Makarov.
Virtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and Optimization.
Mat. Sci. Forum 353-356, 57 (2001).
- S.Yu. Karpov et al.
Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere
Phys. Stat. Sol. (a) 176, 435 (1999), 68.45.Da; S7.14.
- O.V. Avdeev, I.S. Barash, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, Yu.N. Makarov, M.G. Ramm, H. Helava.
Manufacturing of crystalline AlN Wafers: Growth of Bulk Crystals, Processing, and Characterization.
Abstract of 1st International Symposium on Growth of III-nitrides. June 4-7 2006, Linkoeping, Sweden.