Nitride Crystals, Inc. grows silicon carbide (SiC) wafers using variation of the physical vapor transport (PVT) process, which is also known as sublimation growth. We have developed micropipe-free 2" and 3" 4H and 6H silicon carbide wafers, and are currently working on zero micropipe 4" 4H silicon carbide crystals.
In addition to silicon carbide wafers, Nitride Crystals now offers technology transfer and training for high growth-rate manufacturing of low micropipe SiC wafers.
Our efforts were initially motivated by the need for seeds for rapidly scaling the aluminum nitride (AlN) crystal diameter, though now we are planning on offering these materials on the market.
Silicon carbide crystals may develop growth defects, or dislocations, limiting the area and operating currents of silicon carbide devices. Reduction in micropipe densities and growth of high-quality bulk SiC wafers suitable for substrate fabrication is a key point for further development of high-temperature and high-power electronics. For the best low micropipe SiC wafers developed by Nitride Crystals, Inc, the source utilization efficiency higher than 90% was achieved. The SiC wafers manufactured by Nitride Crystals compare favorable to those of the most widely recognized manufacturers in all respects - crystallinity, defects, and polishing.