Low Micropipe Silicon Carbide (SiC) Wafers

 
  • Low micropipe - visible defects in usable area < 30 - 100
  • Edge exclusion 1 - 4 mM
  • Usable area 50 - 90%
  • Mechanical and chemical stability
  • Low dislocation density

Specification

Parameter Name 50.8 mM (2") 76.2 mM (3")
Thickness, mM (250-600) ± 50 (450-950) ± 50
Dopant n-type Nitrogen n-type Nitrogen
Micropipe Density, cM -2 A < 30 A < 30
B < 50 B < 50
C < 100 C < 100
D < 30 - 100 D < 30 - 100
Wafer orientation (0001), +/-deg <0.5 <0.5
Primary Flat Length, mM 16 ± 1.6 22 ± 2
Primary Flat orientation, +/-deg <11-20> ± 5 <11-20> ± 5
Secondary Flat Length, mM 8 ± 1.6 11 ± 1.5
Secondary Flat orientation, +/-deg Si-face: 90 ± 5 cw. from orientation flat Si-face: 90 ± 5 cw. from orientation flat
Working surface processing (0001) SiC Diamond polishing Diamond polishing
Packaging Single wafer package Single wafer package